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Question With Answer Basic Electronics Engineering
Q1. At temperature of 298 Kelvin, Silicon is not suitable for most-electronic applications, due to small amount of conductivity. This can be altered by
- Gettering
- Doping
- Squeezing
- Sintering
Answer: (b)
- By doping Germanium with Gallium, the types of semi-conductors formed are:
- N type
- P type
- Intrinsic
- Extrinsic
Which of the above are correct?
(a) 1 and 4
(b) 2 and 4
(c) 1 and 3
(d) 2 and 3
Answer: (b)
- An n-type of silicon can be formed by adding impurity of:
- Phosphorous
- Arsenic
- Boron
- Aluminum
Which of the above are correct?
(a) 1 and 2
(b) 2 and 3
(c) 3 and 4
(d) 1 and 4
Answer: (a)
Q4. According to Einstein’s relationship for a semiconductor, the ratio of diffusion constant to the mobility of the charge carriers is
- Variable and is twice the volt equivalent of the temperature
- Constant and is equal to the volt equivalent of the temperature
- Equal to two and is twice the volt equivalent of the temperature
- Equal to one and is equal to the volt equivalent of the temperature
Answer: (b)
Q5. Swept-out voltage in PIN diode happens when PIN diode is
- Forward biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers
- Reverse biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers
- Forward biased and the thickness of the depletion layer increases till I-region becomes free of mobile carriers
- Reverse biased and the thickness of the depletion layer decreases till I-region becomes free of mobile carriers
Answer: (b)
Q6. The number of holes in an N-type silicon with intrinsic value 1.5 × 1010/cm3 and doping concentration of 1017/cm3, by using mass-action law is
- 6.67 × 106/cc
- 4.44 × 10-25/cc
- 1.5× 10-24/cc
- 2.25 × 103/cc
Answer: (d)
Q7. A tunnel-diode is best suited for
- Very low frequencies
- 50 Hz
- 100 Hz
- Microwave frequencies
Answer: (d)
Q8. Small recovery time of a diode is most significant for
- Line-frequency rectification
- Switching operations
- High-frequency rectifications and switching operations
- Low-frequency rectifications and switching operations
Answer: (c)
Q9. In JFET, when operated above the pinch-off voltage, the
- Depletion region becomes smaller
- Drain current starts decreasing
- Drain current remains practically constant
- Drain current increases steeply
Answer: (c)
Q10. Thermal runaway is not possible in FET because, as the temperature of FET increases
- The drain current increases
- The mobility of charge carriers decreases
- The mobility of charge carriers increases
- The transconductance increases
Answer: (b)
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